QTLP610CPD データシートの表示（PDF） - Fairchild Semiconductor
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QTLP610CPD Datasheet PDF : 6 Pages
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RIGHT ANGLE SURFACE
MOUNT INFRARED
PHOTOTRANSISTOR
QTLP610CPD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCE
VEC
PD
Rating
-25 to +85
-40 to +90
240 for 5 sec
260 for 10 sec
30
5
75
Unit
°C
°C
°C
°C
V
V
mW
Notes:
1. At 25°C or below.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100µs, T = 10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
TEST CONDITIONS (λP = 940nm)
Peak Sensitivity Wavelength
Reception Angle
Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
VCE = 20 V, Ee = 0
IC = 100µA, Ee = 0
IE = 100µA, Ee = 0
Ee = 1 mW/cm2
VCE = 5V
Ee = 1 mW/cm2
IC = 2mA
VCE = 5V, RL = 1000Ω
IC = 1mA
SYMBOL
λPS
Θ
ID
BVCEO
BVECO
IC(ON)
VCE(SAT)
tr
tf
MIN.
—
—
—
30
5
0.1
—
—
—
TYP.
860
±80
—
—
—
0.5
—
15
15
MAX.
—
—
100
—
—
—
0.4
—
—
UNITS
nm
Deg.
nA
V
V
mA
V
µs
µs
© 2005 Fairchild Semiconductor Corporation
Page 2 of 6
7/7/05
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