RBO40-40G(2003) データシートの表示（PDF） - STMicroelectronics
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RBO40-40G Datasheet PDF : 10 Pages
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Symbol
VRM31/VRM32
VBR31/VBR32
IR31/IR32
VCL31/VCL32
VF13
IPP
αT
C31/C32
C13
Parameter
Stand-off voltage Transil T1 / Transil T2.
Breakdown voltage Transil T1 / Transil T2.
Leakage current Transil T1 / Transil T2.
Clamping voltage Transil T1 / Transil T2.
Forward voltage drop Diode D1.
Peak pulse current.
Temperature coefficient of VBR.
Capacitance Transil T1 / Transil T2.
Capacitance of Diode D1
RBO40-40G / RBO40-40T
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < Tamb < + 85°C)
Symbol
VF 13
VF 13
VF 13
VF 13
C13
Test Conditions
IF = 40 A
IF = 20A
IF = 1 A
IF = 100 mA
F = 1MHz VR= 0 V
Min.
Value
Typ.
3000
Max.
1.9
1.45
1
0.95
Unit
V
V
V
V
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C)
Symbol
VBR 31
VBR 31
IRM 31
IRM 31
VCL 31
αT
C 31
Test Conditions
IR = 1 mA
IR = 1 mA, Tamb = 25°C
VRM = 20 V
VRM = 20 V, Tamb = 25°C
IPP = 37.5A, Tj initial = 25°C
Temperature coefficient of VBR
F = 1MHz VR = 0 V
10/1000µs
Min.
22
24
Value
Typ.
3000
Max.
35
32
100
10
40
9
Unit
V
V
µA
µA
V
10-4/°C
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C)
Symbol
Test Conditions
VBR 32
VBR 32
IRM 32
IRM 32
VCL 32
αT
C32
IR = 1 mA
IR = 1 mA, Tamb = 25°C
VRM = 20 V
VRM = 20 V, Tamb = 25°C
IPP = 20 A (note 1)
Temperature coefficient of VBR
F = 1MHz VR = 0 V
Note 1 : One pulse, see pulse definition in load dump test generator circuit.
Min.
22
24
Value
Typ.
8000
Max.
35
32
100
10
40
9
Unit
V
V
µA
µA
V
10-4/°C
pF
3/10
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