RD12MVP1 データシートの表示（PDF） - Mitsumi
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RD12MVP1 Datasheet PDF : 9 Pages
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< Silicon RF Power MOS FET (Discrete) >
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V
-
-
10
IGSS Gate to Source Leak Current VGS=10V, VDS=0V
-
-
1.0
VTH Gate Threshold Voltage
VDS=12V, IDS=1mA
1.8
-
4.4
Pout Output Power
f=175MHz,VDD=7.2V
10 12
-
D Drain Efficiency
Pin=0.5W,Idq=1.0A
55 57
-
VDD=9.5V,Po=10W(Pin Control)
VSWRT Load VSWR tolerance
f=175MHz,Idq=1.0A,Zg=50
No destroy
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
Publication Date : Oct．2011
2
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