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RF2103P データシートの表示(PDF) - RF Micro Devices

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RF2103P
RFMD
RF Micro Devices RFMD
RF2103P Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
RF2103P
Pin
14
Function
RF OUT
Description
Interface Schematic
Amplifier RF output. This is an unmatched collector output of the final
amplifier transistor. It is internally connected to pins 8, 9, 13 and 14 to
provide low series inductance and flexibility in output matching. Bias for
the final power amplifier output transistor must also be provided
through two of these four pins. Typically, pins 8 and 9 are connected to
a network that provides the DC bias and also creates a second har-
monic trap. For 915MHz operation, this harmonic trap network is simply
a single 2pF capacitor from both pins to ground. This capacitor series
resonates with internal bond wires at two times the operating fre-
quency, effectively shorting out the second harmonic. Shorting out this
harmonic serves to increase the amplifier’s maximum output power and
efficiency, as well as to lower the level of the second harmonic output.
Typically, pins 13 and 14 are externally connected very close to the
package and used as the RF output with a matching network that pre-
sents the optimum load impedance to the PA for maximum power and
efficiency, as well as providing DC blocking at the output. Shunt protec-
tion diodes are included to clip peak voltage excursions above approxi-
mately 15V to prevent voltage breakdown in worst case conditions.
Application Schematic
6.8 nH 22Ω
RF IN
1
12 nH
2
VB
VCC
For lower frequency
operation: Cut trace
1
on board and insert
μF
inductor L4
3
100 pF
4
5
100
pF
6
7
100 pF
.01" x .2"
(PCB material: FR-4,
Thickness:0.031")
PRE AMP FPA
BIAS
CIRCUITS
14
RF OUT
C1
L1
13
12
For lower frequenc
operation: Cut trac
11
on board and inser
inductor L3
10
9
VCC
L2
8
C2
330 pF
FREQUENCY (MHLz1) (nH) L2 (nH) L3 (nH) L4 (nH) C1 (pF) C2 (pF)
275
480
915
20
15
10
20
20
10
12
6.8
4.7
18
12
6.8
6.8
3.3
4
2
2-10
Rev B2 060202

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