RF3166D データシートの表示（PDF） - RF Micro Devices
部品番号
コンポーネント説明
メーカー
RF3166D Datasheet PDF : 14 Pages
| |||
RF3166D
DCS IN
BAND SELECT
TX ENABLE
VBATT
50 Ω μstrip
VRAMP
GSM IN
50 Ω μstrip
Application Schematic
1
2
3
4
5
6
7
50 Ω μstrip
9
DCS OUT
50 Ω μstrip
8
GSM OUT
DCS IN
BAND SELECT
TX ENABLE
VBATT
VRAMP
GSM IN
50 Ω μstrip
22 μF*
50 Ω μstrip
Evaluation Board Schematic
P1
1 GND P2-1
CON1
P2
1 VCC
CON1
50 Ω μstrip
1
9
DCS OUT
2
3
4
5
6
50 Ω μstrip
7
8
GSM OUT
Notes:
* The value of VBATT decoupling capacitor depends on the noise level of the phone board. Capacitor type
may be either tantalum or ceramic. Some applications may not require this capacitor.
1. All the PA output measurements are referenced to the PA output pad (pins 8 and 9).
2. The 50 Ω μstrip between the PA output pad and the SMA connector has an approximate insertion loss
of 0.1 dB for EGSM900 and 0.2 dB for DCS1800 bands.
8 of 14
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A2 061006
Share Link: 