RGP02-12E-E3 データシートの表示（PDF） - Vishay Semiconductors
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RGP02-12E-E3 Datasheet PDF : 4 Pages
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1
0.1
0.01
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
RGP02-xxE
Vishay General Semiconductor
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.001
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.026 (0.66)
0.023 (0.58)
DIA.
1.0 (25.4)
MIN.
Revision: 07-Nov-16
3
Document Number: 88699
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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