RJK6013DPE(2007) データシートの表示（PDF） - Renesas Electronics

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RJK6013DPE
(Rev.:2007)

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6013DPE

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1) )

4

123

G

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

Channel to case thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

Symbol

VDSS

VGSS

ID

ID

Note1

(pulse)

IDR

IDR

Note1

(pulse)

IAPNote3

EARNote3

Pch Note2

θch-c

Tch

Tstg

REJ03G1535-0100

Rev.1.00

Apr 04, 2007

D

1. Gate

2. Drain

3. Source

4. Drain

S

Ratings

600

±30

11

33

11

33

4

0.87

100

1.25

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

mJ

W

°C/W

°C

°C

REJ03G1535-0100 Rev.1.00 Apr 04, 2007

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