RJK6022DJE(2006) データシートの表示（PDF） - Renesas Electronics

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RJK6022DJE
(Rev.:2006)

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6022DJE

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

• Low drive current

• High density mounting

Outline

RENESAS Package code: PRSS0003DC-A

(Package name: TO-92 Mod)

G

321

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Channel dissipation

Channel to ambient thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Symbol

VDSS

VGSS

ID

ID

Note1

(pulse)

IDR

IDR

Note1

(pulse)

Pch

θch-a

Tch

Tstg

REJ03G1484-0600

Rev.6.00

Nov 10, 2006

D

1. Source

2. Drain

3. Gate

S

Ratings

600

±30

0.2

0.8

0.2

0.8

0.9

139

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

W

°C/W

°C

°C

Rev.6.00 Nov 10, 2006 page 1 of 6

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