RJP4002ASA-00-Q0 データシートの表示（PDF） - Renesas Electronics

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RJP4002ASA-00-Q0

Nch IGBT for Strobe Flash

Renesas Electronics 

RJP4002ASA

Electrical Characteristics

Parameter

Collector-emitter breakdown voltage

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Input capacitance

Symbol

V(BR)CES

ICES

IGES

VGE(th)

VCE(sat)

Cies

Min.

450

—

—

0.4

—

—

Typ.

—

—

—

0.6

4.5

6500

Max.

—

10

±10

1.2

9.0

—

Unit

V

µA

µA

V

V

pF

(Tj = 25°C)

Test conditions

IC = 1 mA, VGE = 0 V

VCE = 400 V, VGE = 0 V

VGE = ±4 V, VCE = 0 V

VCE = 10 V, IC = 1 mA

IC = 150 A, VGE = 2.5 V

VCE = 25 V, VGE = 10 V,

f = 1MHz

Performance Curves

Maximum Pulse Collector Current

(Conductive Capability in Strobe Flash Applications)

200

TC = 70°C

CM = 400 µF

150 RG = 30 Ω

100

50

0

0 1 2 34 56

Gate - Emitter Voltage VGE (V)

Rev.1.00 Oct 13, 2006 page 2 of 4

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