RJP4002ASA-00-Q0 データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

メーカー

RJP4002ASA-00-Q0

Nch IGBT for Strobe Flash

Renesas Electronics 

RJP4002ASA

Application Example

VCM

Trigger Transformer

Xe Tube

CM +

–

4

3

2

1

5

6

7

8

IGBT driver

RD3CYD08

VCM

ICP

CM

VGE

Recommended Operation Maximum Operation

Conditions

Conditions

330 V

350 V

130 A

150 A

300 µF

400 µF

2.85 V

2.5 V

Precautions on Usage

1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the

device from electrostatic charge.

2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And

turn-off dv/dt must become less than 400 V/ µs. In general, when RG (off) = 30 Ω, it is satisfied.

3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large

currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents

since the specified gate voltage is not applied to the IGBT within the device.

4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :

full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3

seconds.

5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 4 V.

Rev.1.00 Oct 13, 2006 page 3 of 4

Share Link: