RJP4003ASA
Electrical Characteristics
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Min.
450
—
—
0.5
—
—
Typ.
—
—
—
0.7
5.0
5000
Max.
—
10
±10
1.5
10.0
—
Unit
V
µA
µA
V
V
pF
(Tj = 25°C)
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±6 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
IC = 150 A, VGE = 4 V
VCE = 25 V, VGE = 10 V,
f = 1MHz
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flash Applications)
200
TC = 70°C
CM = 400 µF
150 RG = 68 Ω
100
50
0
0
2
4
6
8
Gate - Emitter Voltage VGE (V)
REJ03G1475-0200 Rev.2.00 Nov 10, 2008
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