RMPA1967 データシートの表示（PDF） - Fairchild Semiconductor
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RMPA1967
Fairchild Semiconductor
RMPA1967 Datasheet PDF : 9 Pages
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Absolute Ratings1
Parameter
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Parameter
Symbol Min Typ Max Units Comments
Operating Frequency C
f
1850
1910
MHz
CDMA Operation
Small-Signal Gain
Power Gain
Linear Output Power
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±1.25MHz Offset
±2.25MHz Offset
General Characteristics
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression3
Spurious Outputs2,3
Ruggedness w/ Load Mismatch3
Case Operating Temperature
DC Characteristics
Quiescent Current
Reference Current
Shutdown Leakage Current
SSg
Gp
Po
PAEd
Itot
26
27
24
28
16
40
9
21
460
120
ACPR1
-50
-52
ACPR2
-60
-68
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
dBc
dBc
dBc
dBc
Po = 0dBm
Po = +28dBm; Vmode = 0V
P Po = +16dBm; Vmode 2.0V
Vmode = 0V
P Vmode 2.0V
Vmode = 0V
P Vmode 2.0V
P Vmode 2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
P Po = +16dBm, Vmode 2.0V
IS-95 A/B Modulation
Po = +28dBm; Vmode = 0V
P Po = +16dBm; Vmode 2.0V
Po = +28dBm; Vmode = 0V
P Po = +16dBm; Vmode 2.0V
VSWR
NF
Rx No
2fo-5fo
S
Tc
2.0:1
4
-139
-30
dB
O dBm/Hz Po +28dBm; 1930 to 1990MHz
-50
O dBc Po +28dBm
-60
O dBc Load VSWR 5.0:1
10:1
No permanent damage.
85
°C
Iccq
Iref
Icc(off)
45
5
1
5
P mA Vmode 2.0V
O mA Po +28dBm
µA No applied RF signal.
Notes:
O 1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V, f = 1880MHz and load VSWR 1.2:1, unless
otherwise noted.
2. All phase angles.
3. Guaranteed by design.
RMPA1967 Rev. F
2
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