RN4981 データシートの表示（PDF） - Toshiba

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RN4981

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

Toshiba 

RN4981

TOSHIBA Transistor

Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

RN4981

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in US6 (ultra super mini type with 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 4.7kΩ

R2: 4.7kΩ

(Q1, Q2 Common)

Q1 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

IC

Rating

50

50

10

100

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

IC

Rating

−50

−50

−10

−100

JEDEC

―

Unit

JEITA

―

V

TOSHIBA

2-2J1A

Weight: 6.8mg (typ.)

V

V

mA

Unit

V

V

V

mA

Start of commercial production

1992-10

1

2014-03-01

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