RQA0001DNSTR データシートの表示（PDF） - Renesas Electronics

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RQA0001DNSTR

Silicon N-Channel MOS FET

Renesas Electronics 

RQA0001DNS

Silicon N-Channel MOS FET

Features

• High Output Power, High Gain, High Efficiency

Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)

• Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

Outline

RENESAS Package code: PWSN0002ZA-A

(Package name: HWSON-2 <WSON0303-2>)

3

3

2

1

1

3

2

1

2

Note: Marking is “A0001”.

REJ03G0582-0300

Rev.3.00

Oct 11, 2006

1. Gate

2. Source

3. Drain

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Channel dissipation

Channel temperature

Storage temperature

Note: Value at Tc = 25°C

Symbol

VDSS

VGSS

ID

Pchnote

Tch

Tstg

Ratings

16

±5

0.8

5

150

–50 to +150

(Ta = 25°C)

Unit

V

V

A

W

°C

°C

This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.

Rev.3.00 Oct 11, 2006 page 1 of 12

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