RQA0004PXDQS(2006) データシートの表示（PDF） - Renesas Electronics

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RQA0004PXDQS
(Rev.:2006)

Silicon N-Channel MOS FET

Renesas Electronics 

RQA0004PXDQS

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-.2

-.4

-.6

-.8 -1

-5

-4

-3

-2

-1.5

Test condition: VDS = 6 V, IDQ = 50 mA, ZO = 50 Ω

100 to 1000 MHz (50 MHz step)

1000 to 2500 MHz (100 MHz step)

S21 Parameter vs. Frequency

90°

Scale: 5 / div.

120°

60°

150°

30°

180°

0°

-150°

-30°

-120°

-60°

-90°

Test condition: VDS = 6 V, IDQ = 50 mA, ZO = 50 Ω

100 to 1000 MHz (50 MHz step)

1000 to 2500 MHz (100 MHz step)

S12 Parameter vs. Frequency

90°

Scale: 0.01 / div.

120°

60°

150°

30°

180°

0°

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-150°

-30°

-120°

-60°

-90°

-.2

-.4

-.6

-.8 -1

-5

-4

-3

-2

-1.5

Test condition: VDS = 6 V, IDQ = 50 mA, ZO = 50 Ω

100 to 1000 MHz (50 MHz step)

1000 to 2500 MHz (100 MHz step)

Test condition: VDS = 6 V, IDQ = 50 mA, ZO = 50 Ω

100 to 1000 MHz (50 MHz step)

1000 to 2500 MHz (100 MHz step)

Rev.1.00 Dec 12, 2006 page 4 of 12

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