RQA0005QXDQS(2006) データシートの表示（PDF） - Renesas Electronics

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RQA0005QXDQS
(Rev.:2006)

Silicon N-Channel MOS FET

Renesas Electronics 

RQA0005QXDQS

S11 Parameter vs. Frequency

.8 1

.6

.4

1.5

2

3

4

.2

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-.2

-5

-4

-3

-.4

-2

-.6

-.8 -1

-1.5

Condition: VDS = 6V, IDQ = 200 mA, Zo = 50 Ω

100 to 1000 MHz (50 MHz Step)

1000 to 2500 MHz (200 MHz Step)

S21 Parameter vs. Frequency

90°

Scale: 5 / div.

120°

60°

150°

30°

180°

0°

-150°

-30°

-120°

-60°

-90°

Condition: VDS = 6V, IDQ = 200 mA, Zo = 50 Ω

100 to 1000 MHz (50 MHz Step)

1000 to 2500 MHz (200 MHz Step)

S12 Parameter vs. Frequency

90° Scale: 0.01 / div.

120°

60°

150°

30°

180°

0°

-150°

-30°

-120°

-60°

-90°

Condition: VDS = 6V, IDQ = 200 mA, Zo = 50 Ω

100 to 1000 MHz (50 MHz Step)

1000 to 2500 MHz (200 MHz Step)

S22 Parameter vs. Frequency

.8 1

.6

1.5

2

.4

3

4

.2

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-.2

-.4

-.6

-.8 -1

-5

-4

-3

-2

-1.5

Condition: VDS = 6V, IDQ = 200 mA, Zo = 50 Ω

100 to 1000 MHz (50 MHz Step)

1000 to 2500 MHz (200 MHz Step)

Rev.1.00 Oct 16, 2006 page 6 of 12

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