RQJ0303PGDQA(2006) データシートの表示（PDF） - Renesas Electronics
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RQJ0303PGDQA Datasheet PDF : 7 Pages
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RQJ0303PGDQA
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.3
Pulse Test
Tc = 25°C
–0.2
–1.0 A
–0.1
–0.5 A
–0.2 A
0
0 –4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Case Temperature
120
Pulse Test
110 VGS = –4.5 V
100
ID = –1 A
90
–0.5 A
80
–0.2 A
70
60
50
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
Pulse Test
VDS = –10 V
–25°C
1
Tc = 75°C
25°C
0.1
–0.1
–0.3
–1
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
Tc = 25°C
0.3
0.1
0.03
VDS = -4.5 V
–10 V
0.01
–0.1 –0.3
–1
–3
–10
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature
90
Pulse Test
80 VGS = –10 V
70
ID = –1 A
–0.5 A
60
–0.2 A
50
40
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
–10000
–1000
Pulse Test
VGS = 0 V
VDS = –30 V
–100
–10
–1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.4.00, May 26, 2006, page 4 of 6
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