RQJ0303PGDQA データシートの表示（PDF） - Renesas Electronics
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RQJ0303PGDQA Datasheet PDF : 8 Pages
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RQJ0303PGDQA
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
–30
+10
–20
—
—
—
–1.0
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
54
76
4.2
625
111
83
18
29
47
5.7
12
1.5
2.9
–0.9
Max
—
—
—
+10
–10
–1
–2.0
68
107
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
V
μA
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
ID = –10 mA, VGS = 0
IG = +100 μA, VDS = 0
IG = –100 μA, VDS = 0
VGS = +8 V, VDS = 0
VGS = –16 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –1.6 A, VGS = –10 VNote3
ID = –1.6 A, VGS = –4.5 VNote3
ID = –1.6 A, VDS = –10 VNote3
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –1 A, VGS = –10 V,
RL = 6.6 Ω, Rg = 4.7 Ω
VDD = –10 V, VGS = –10 V,
ID = –3.3A
IF = –1.5 A, VGS = 0 Note3
R07DS0295EJ0600 Rev.6.00
Jan 10, 2014
Page 2 of 7
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