RT8020EPQW データシートの表示（PDF） - Richtek Technology

部品番号

コンポーネント説明

メーカー

RT8020EPQW

Dual High-Efficiency PWM Step-Down DC/DC Converter

Richtek Technology 

RT8020E

Absolute Maximum Ratings (Note 1)

z Supply Input Voltage, VIN1, VIN2 ----------------------------------------------------------------------------------- −0.3V to 6.5V

z EN1, FB1, LX1, EN2, FB2 and LX2 Pin Voltage --------------------------------------------------------------- −0.3V to VIN + 0.3V

z Power Dissipation, PD @ TA = 25°C

WDFN-12L 3x3 --------------------------------------------------------------------------------------------------------- 1.667W

z Package Thermal Resistance (Note 2)

WDFN-12L 3x3, θJA --------------------------------------------------------------------------------------------------- 60°C/W

WDFN-12L 3x3, θJC --------------------------------------------------------------------------------------------------- 8.2°C/W

z Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------------------- 260°C

z Junction Temperature ------------------------------------------------------------------------------------------------- 150°C

z Storage Temperature Range ---------------------------------------------------------------------------------------- −65°C to 150°C

z ESD Susceptibility (Note 3)

HBM (Human Body Mode) ------------------------------------------------------------------------------------------ 2kV

MM (Machine Mode) -------------------------------------------------------------------------------------------------- 200V

Recommended Operating Conditions (Note 4)

z Supply Input Voltage, VIN1, VIN2 ----------------------------------------------------------------------------------- 2.5V to 5.5V

z Junction Temperature Range ---------------------------------------------------------------------------------------- −40°C to 125°C

z Ambient Temperature Range ---------------------------------------------------------------------------------------- −40°C to 85°C

Electrical Characteristics

(VIN = 3.6V, VOUT = 1.8V, L = 4.7μH, CIN = 4.7μF, COUT = 10μF, IMAX= 1A, TA = 25° C, unless otherwise specified)

Parameter

S ymbo l

Test Conditions

Min Typ Max

Channel 1 and Channel 2

Under Voltage Lock Out

threshold

Hysteresis

VUVLO

-- 1.8 --

-- 0.1 --

Quiescent Current

Shutdown Current

Output Voltage Accuracy

FB Input Current

RDS(ON) of P-MOSFET

RDS(ON) of N-MOSFET

IQ

IOUT = 0mA, VFB = VREF + 5%

-- 50 70

ISHDN

EN = GND

-- 0.1 1

ΔVOUT1

VIN1 = 2.5V to 5.5V, VOUT1 = 1.2V

0A < IOUT1 < 1A

−2

--

2

ΔVOUT2

VIN2 = 2.5 to 5.5V, VOUT2 = 1.8V

0A < IOUT2 < 1A

−2 --

2

IFB

VFB = VIN

−50 -- 50

RDS(ON)_P IOUT = 200mA

VIN = 2.5V

VIN = 3.6V

-- 0.38 --

-- 0.28 --

RDS(ON)_N IOUT = 200mA

VIN = 2.5V

VIN = 3.6V

-- 0.35 --

-- 0.25 --

P-Channel Current Limit

ILIM_P

VIN = 2.5V to 5.5 V

1.4 1.5 2

EN Input

Logic-High

Threshold Voltage Logic-Low

Oscillator Frequency

VIH

VIL

fOSC

VIN = 2.5V to 5.5V

VIN = 2.5V to 5.5V

VIN = 3.6V, IOUT = 100mA

1.5 -- VIN

--

-- 0.4

1.2 1.5 1.8

Unit

V

V

μA

μA

%

%

nA

Ω

Ω

A

V

MHz

www.richtek.com

4

To be continued

DS8020E-02 March 2011

Share Link: