MBM29F800BA データシートの表示（PDF） - Fujitsu

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MBM29F800BA

FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT

Fujitsu 

MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90

s PRODUCT LINE UP

Part No.

Ordering Part No.

VCC = 5.0 V ± 5 %

VCC = 5.0 V ± 10 %

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

s BLOCK DIAGRAM

MBM29F800TA/MBM29F800BA

-55

—

—

—

-70

-90

55

70

90

55

70

90

30

30

40

VCC

VSS

WE

BYTE

RESET

CE

OE

RY/BY

Buffer

RY/BY

Erase Voltage

Generator

DQ0 to DQ15

Input/Output

Buffers

State

Control

Command

Register

Program Voltage

Generator

Chip Enable

Output Enable

Logic

STB Data Latch

A0 to A18

A-1

STB

Y-Decoder

Low VCC Detector

Timer for

Program/Erase

Address

Latch

X-Decoder

Y-Gating

Cell Matrix

5

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