ID242 データシートの表示（PDF） - Sharp Electronics

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ID242

Flash Memory Card

Sharp Electronics 

SHARP

ID242 SERIES PRODUCT OVERVIEW

5. Signal Description

Table 2. Signal Description

Symbol l/O Electrical interface

Ao-Azs

1 Pull-down

(250k Q @ Vcc=Sv)

Du-D15

1/o Pull-down

(2’0k ’ @VCC=‘V)

Function

ADDRESS INPUTS:

These are address bus lines which enable direct addressing of memory

on the card. Signal AI) is not used in word access mode. The system

should NOT access memory beyond the card’s density. because the

upper addresses are not decoded.

DATA INPUT/OUTPUT:

De through Dls constitute the bi-directional data bus. DIG is the most

significant bit,

CEI#,CEZ#

OE#

WE#

RDY/BSY#

CDt#, CD2#

WP

VPPI, VW2

vcc

GND

REG#

RESET

BVDt, BVD2

VSI#, VS2#

RFU

1 Pull-up

(250k Q @Vcc=Sv)

1 Pull-up

(250k Q @ Vcc=Sv)

CARD ENABLE I & 2:

CEI# enables Do-D7, CE2# enables Dx-DIG.

OUTPUT ENABLE:

Active low signal gating read data from the memory card.

1 Pull-up

WRlTE ENABLE:

(250k 52@ Vcc=Sv) Active low signal gating write data to the memory c‘ard.

0

0 Pull-down Ow

READY/BUSY OUTPUT:

indicates status of internally timed erase or write activities. lD242

series has two types of Ready/Busy output mode; PCMClA mode and

High-Performance mode.

In PCMClA mode, a high output indicates the memory card is ready

to accept accesses. A low output indicates that a device in the memory

c,ard is busy.

In High-Performance mode, the card outputs low when the card is in

default state. A high output indicates at least one of flash memory

devices in the card comes to be ready to accept accesses.

CARD DETECT 1 & 2:

These signals provide for card insertion detection. The signals are

connected to ground internally on the memory card, and will be forced

low whenever a card is placed in the socket. The host socket interface

circuitry shall supply 10K or larger pull-up resistors on these signal

pins.

o

LowPull-down

High:Pull-up

OW

1OOkw

WRlTE PROTECT:

Write Protect reflects the status of the Write Protect switch on the

memory card. WP set to high = write protected.

WRITE/ERASE POWER SUPPLY 1 & 2:

CARD POWER SUPPLY:

GROUND:

1 Pull-up

(250kw @Vcc=Sv)

REGlSTER SELECT:

Provides access to attribute memory when REG# is low.

1 Pull-up

(250kw @Vcc=Sv)

0 Pull-up 1OOkw

RESET:

Active high signal for placing card in Power-On Default State.

BATTERY VOLTAGE DETECT 1 & 2:

These signals are pulled high to maintain SRAM card compatibility.

VOLTAGE SENSE 1 & 2:

VSI#: Pull-down or Notifies the host socket of the ClS’s VCC requirements. VS I# is pulled-

0

N.C.

down to ground when using the standard ClS, that indicate 3.3V

VSB: N.C.

operating is available. And when using the EEPROM for ClS, the VS2#

is open. That indicate the available operation voltage is 5V only.

RESERVED FOR FUTURE USE

CPSOOOZ-002@Mav.1991

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