S9012LT1 データシートの表示（PDF） - Weitron Technology

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S9012LT1

PNP General Purpose Transistors

Weitron Technology 

S9012LT1

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC=-50 mAdc, VCE=-1.0 Vdc)

(IC=-500 mAdc, VCE=-1.0 Vdc)

Collector-Emitter Saturation Voltage

(IC=-500 mAdc, IB=-50mAdc)

Base-Emitter Saturation Voltage

(IC=-500 mAdc, IB=-50mAdc)

Base-Emitter Voltage

( IE=-100mA)

hFE (1)

120

hFE (2)

40

VCE(sat)

-

VBE(sat)

-

VEBF

-

350

-

-

-

-0.6

Vdc

-1.2

Vdc

-1.4

Vdc

SMALL-SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product

(IC=-20 mAdc, VCE=-6 Vdc, f=30MHz)

fT

150

-

MHz

-

CLASSIFICATION OF hFE

Rank

L

Range

120-200

H

200-350

WEITRON

http://www.weitron.com.tw

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