SBE813 データシートの表示（PDF） - SANYO -> Panasonic

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SBE813

Low IR Schottky Barrier Diode

SANYO -> Panasonic 

Ordering number : EN8967A

SBE813

SANYO Semiconductors

DATA SHEET

SBE813

Low IR Schottky Barrier Diode

30V, 3.0A Rectifier

Applications

• High frequency rectification (switching regulators, converters, choppers)

Features

• Small switching noise

• Low leakage current and high reliability due to highly reliable planar structure

• Ultrasmall package permitting applied sets to be small and slim

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

VRRM

VRSM

IO

IFSM

Tj

Storage Temperature

Tstg

Conditions

50Hz sine wave, 1 cycle

Ratings

Unit

30

V

35

V

3.0

A

20

A

--55 to +125

°C

--55 to +125

°C

Package Dimensions

unit : mm (typ)

7012-001

0.3

8 7 65

0.15 SBE813-TL-E

Product & Package Information

• Package

: VEC8

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

1234

0.65

2.9

1 : Anode1

2 : No Contact

3 : Anode2

4 : No Contact

5 : Cathode2

6 : Cathode2

7 : Cathode1

8 : Cathode1

SANYO : VEC8

SE

LOT No.

TL

Electrical Connection

8765

1234

http://www.sanyosemi.com/en/network/

90512 TKIM/32406SB MSIM TB-00002132 No.8967-1/6

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