SCH1330 データシートの表示（PDF） - ON Semiconductor

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SCH1330

P-Channel Power MOSFET –20V, –1.5A, 241mΩ, Single SCH6

ON Semiconductor 

SCH1330

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=--1mA, VGS=0V

VDS=--20V, VGS=0V

VGS=±8V, VDS=0V

VDS=--10V, ID=--1mA

VDS=--10V, ID=--750mA

ID=--750mA, VGS=--4.5V

ID=--300mA, VGS=--2.5V

ID=--100mA, VGS=--1.8V

VDS=--10V, f=1MHz

See specified Test Circuit.

VDS=--10V, VGS=--4.5V, ID=--1.5A

IS=--1.5A, VGS=0V

Switching Time Test Circuit

VIN

0V

--4.5V

VIN

PW=10μs

D.C.≤1%

G

VDD= --10V

ID= --750mA

RL=13.3Ω

D

VOUT

SCH1330

P.G

50Ω

S

Ratings

Unit

min

typ

max

--20

V

--1

μA

±10

μA

--0.4

--1.4

V

1.14

1.9

S

185

241 mΩ

275

385 mΩ

410

615 mΩ

120

pF

26

pF

20

pF

5.3

ns

9.7

ns

16

ns

14

ns

1.7

nC

0.28

nC

0.47

nC

--0.89

--1.2

V

Ordering Information

Device

SCH1330-TL-H

Package

SCH6

Shipping

5,000pcs./reel

memo

Pb Free and Halogen Free

No. A1460-2/7

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