SDD36N16 データシートの表示（PDF） - Sirectifier Electronics
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SDD36N16 Datasheet PDF : 4 Pages
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SDD36
Diode-Diode Modules
Symbol
Test Conditions
IR
VF
VTO
rT
QS
IRM
RthJC
RthJK
dS
dA
a
TVJ=TVJM; VR=VRRM
IF=80A; TVJ=25oC
For power-loss calculations only
TVJ=TVJM
TVJ=125oC; IF=25A; -di/dt=0.6A/us
per diode; DC current
per module
per diode; DC current
per module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
10
1.38
0.8
6.1
50
6
1.0
0.5
1.2
0.6
12.7
9.6
50
Unit
mA
V
V
m
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
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