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SERC816 データシートの表示(PDF) - STMicroelectronics

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SERC816
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SERC816 Datasheet PDF : 23 Pages
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SERCON816
3.5.7 Write Access to DUAL Port RAM
Figure 11. Write Access to DUAL Port RAM
A10-0, BHEN,
MCSN0-1,
tASU
WRN (Motorola mode)
WRN (Intel mode)
RDN (Motorola mode)
tMWRW
D15-0
tMBSY
BUSYN
tAHD
tWR1
tDSU
tDHD
tMBHWH
Symbol
Parameter
Min.
Typ.
Max.
Unit
tASU Setup time A11-0, (Note 1)
10
ns
Setup time MCSN0-1, if both signals are activated
5
ns
simultaneously. (Note 1)
Setup time MCSN0-1, if one of these both signals is activated
0
10 ns earlier. (Note 1)
Setup time BHEN, WRN (only Motorola mode), (Note 1)
0
ns
tAHD hold time A11-0, BHEN, MCSN0-1, WRN (only Motorola
0
ns
mode) to rising edge of WRN (Intel mode) or RDN (Motorola
mode with low active strobe) or falling edge RDN (Motorola
mode with high active strobe)
tMWRW Pulse width WRN or RDN
20
ns
tDSU Setup time D15-0 to end of write access
10
ns
tDHD Hold time D15-0 after end of write access
5
ns
tMBSY Delay WRN or RDN (begin of write access) to BUSYN low
15
ns
tMBHWH Setup time BUSYN high to end of write access
15
ns
tWR1 WRN and RDN high after end of write access
15
ns
Notes: 1. Setup time input signals to falling edge WRN (Intel mode) or RDN (Motorola mode with low active strobe) or rising edge RDN (Mo-
torola mode with high active strobe)
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