SF1200-TAP(2018) データシートの表示（PDF） - Vishay Semiconductors
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SF1200-TAP Datasheet PDF : 4 Pages
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SF1200, SF1600
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Junction ambient
Lead length l = 10 mm, TL = constant
RthJA
45
UNIT
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
IF = 1 A
VR = VRRM
VR = VRRM, Tj = 125 °C
lR = 100 μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
SF1200
SF1600
VF
IR
IR
V(BR)R
V(BR)R
trr
-
-
-
1250
1650
-
TYP.
-
-
-
-
-
-
MAX.
3.4
5
50
-
-
75
UNIT
V
μA
μA
V
V
ns
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
100
10 Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
0.001
0 123456 78 9
16463
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
1000
VR = VRRM
100
10
1
25 50 75 100 125 150 175
16464
Tj - Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
1.0
VR = VRRM
half sine wave
0.8
RthJA = 45 K/W
0.6
l = 10 mm
0.4
0.2
RthJA = 100 K/W
PCB: d = 25 mm
0.0
0 20 40 60 80 100 120 140 160 180
15789 Tamb - Ambient Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
700
VR = VRRM
600
500
PR - Limit
400
at 100 % VR
300
PR - Limit
200
at 80 % VR
100
0
25 50 75 100 125 150 175
16465
Tj - Junction Temperature (°C)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Rev. 1.8, 21-Feb-18
2
Document Number: 86059
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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