Q65110A7758 データシートの表示（PDF） - OSRAM GmbH

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Q65110A7758

Infrared Emitter (850 nm)

OSRAM GmbH 

Version 1.6

SFH 4550

Maximum Ratings (TA = 25 °C)

Parameter

Operating temperature range

Storage temperature range

Reverse voltage

Forward current

Surge current

(tp ≤ 100 µs, D = 0)

Power consumption

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

Thermal resistance junction - ambient 1) page 8

Characteristics (TA = 25 °C)

Parameter

Peak wavelength

(IF = 100 mA, tp = 20 ms)

Centroid wavelength

(IF = 100 mA, tp = 20 ms)

Spectral bandwidth at 50% of Imax

(IF = 100 mA, tp = 20 ms)

Half angle

Dimensions of active chip area

Rise and fall time of Ie ( 10% and 90% of Ie max)

(IF = 100 mA, RL = 50 Ω)

Forward voltage

(IF = 100 mA, tp = 20 ms)

Forward voltage

(IF = 1 A, tp = 100 µs)

Reverse current

(VR = 5 V)

Total radiant flux

(IF=100 mA, tp=20 ms)

Symbol

Top

Tstg

VR

IF

IFSM

Ptot

VESD

RthJA

Values

-40 ... 100

-40 ... 100

5

100

1

180

2

450

Unit

°C

°C

V

mA

A

mW

kV

K/W

(typ)

(typ)

(typ)

Symbol

λpeak

λcentroid

∆λ

Values

860

850

30

Unit

nm

nm

nm

(typ)

(typ)

ϕ

LxW

(typ)

tr, tf

(typ (max)) VF

(typ (max)) VF

IR

(typ)

Φe

±3

0.3 x 0.3

12

°

mm x

mm

ns

1.5 (≤ 1.8)

V

2.4 (≤ 3)

V

not designed for µA

reverse operation

70

mW

2017-06-22

2

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