SFW9510 データシートの表示（PDF） - Fairchild Semiconductor
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SFW9510 Datasheet PDF : 7 Pages
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SFW/I9510
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
-100 --
-- -0.1
-2.0 --
-- --
-- --
-- --
-- --
-- --
-- V
-- V/oC
-4.0 V
-100 nA
100
-10
-100 µA
1.2 Ω
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-20V
VGS=20V
VDS=-100V
VDS=-80V,TC=150oC
VGS=-10V,ID=-1.8A O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 1.8 -- S VDS=-40V,ID=-1.8A O4
-- 260 335
-- 50 80 pF VGS=0V,VDS=-25V,f =1MHz
See Fig 5
-- 17 25
-- 10 30
-- 20 50
VDD=-50V,ID=-3.6A,
-- 25 60 ns RG=24 Ω
-- 12 35
See Fig 13 O4 O5
-- 9 10
VDS=-80V,VGS=-10V,
-- 1.5 -- nC ID=-3.6A
-- 4.3 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -3.6
Integral reverse pn-diode
A
-- -14
in the MOSFET
O4 -- -- -3.8 V TJ=25oC,IS=-3.6A,VGS=0V
-- 100 -- ns TJ=25oC,IF=-3.6A
-- 0.35 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=6.0mH, IAS=-3.6A, VDD=-25V, RG=27Ω*, Starting TJ =25oC
O3 ISD <_ -3.6A, di/dt <_ 300A/µs, VDD<_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250µs, Duty Cycle<_ 2%
O5 Essentially Independent of Operating Temperature
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