SGL50N60RUFD データシートの表示（PDF） - Fairchild Semiconductor
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SGL50N60RUFD Datasheet PDF : 8 Pages
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10000
Common Emitter
VGE = ± 15V, RG = 5.9
TC = 25℃ ━━
TC = 125℃ ------
Eoff
Eon
Eoff
1000
100
10 20
40
60
80
100
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
500
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
Single Nonrepetitive
1 Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
15
Common Emitter
RL = 6
12 TC = 25℃
9
VCC = 100 V
300 V
200 V
6
3
0
0
30
60
90
120
150
180
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
100
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + TC
100
101
Fig 17. Transient Thermal Impedance of IGBT
©1999 Fairchild Semiconductor Corporation
5
SGL50N60RUFD Rev. C0
www.fairchildsemi.com
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