SGM2013 データシートの表示（PDF） - Sony Semiconductor
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SGM2013 Datasheet PDF : 5 Pages
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Electrical Characteristics
Item
Gate 1 to source current
Symbol
IG1SS
Gate 2 to source current
IG2SS
Drain saturation current
Gate 1 to source cut-off
voltage
Gate 2 to source cut-off
voltage
IDSS
VG1S
(OFF)
VG2S
(OFF)
Forward transfer admittance gm
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
Ciss
Crss
NF
Ga
Conditions
VG1S = –3V
VG2S = 0V
VDS = 0V
VG2S = –3V
VG1S = 0V
VDS = 0V
VDS = 2V
VG1S = 0V
VG2S = 0V
VDS = 2V
ID = 100µA
VG2S = 0V
VDS = 2V
ID = 100µA
VG1S = 0V
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 1kHz
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 1MHz
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 900MHz
SGM2013N
(Ta = 25°C)
Min.
Typ.
Max. Unit
–4 µA
–4 µA
4
16 mA
–1.5 V
–1.5 V
8
11
ms
0.55
1
pF
15
30
fF
1.4
2.5 dB
15
18
dB
Typical Characteristics (Ta = 25°C)
20
(VG2S = 0.5V)
ID vs. VDS
16
12
8
4
0
0
1
2
3
4
5
VDS – Drain to source voltage [V]
VG1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
6
20
(VDS = 2V)
ID vs. VG1S
16
12
8
4
0
–2.0
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
VG2S
= 0.5V
0.25V
0V
–0.25V
–0.5V
–0.75V
–1.0V
0
–2–
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