SI9986DY(2004) データシートの表示（PDF） - Vishay Semiconductors
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SI9986DY Datasheet PDF : 4 Pages
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Si9986
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGSa
Voltage on any pin with respect to ground . . . . . . . . . . . −0.3 V to VDD +0.3 V
Voltage on pins 5, 8 with respect to GND . . . . . . . . . . . . . . −1 V to VDD +1 V
Voltage on pins 1, 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to GND +1 V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C
Maximum VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Power Dissipationb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
qJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100_C/W
Operating Temperature Range
Si9986CY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 70_C
Si9986DY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C
Notes
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 10 mW/_C above 25_C.
RECOMMENDED OPERATING RANGE
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8 V to 13.2 V
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 125_C
SPECIFICATIONS
Parameter
Input
Input Voltage High
Input Voltage Low
Input Current with Input Voltage High
Input Current with Input Voltage Low
Output
Output Voltage High
Output Voltage Low
Output Leakage Current High
Output Leakage Current Low
Output V Clamp High
Output V Clamp Low
Supply
VDD Supply Current
Dynamic
Propogation Delay Time
Symbol
Test Conditions
Unless Otherwise Specified
VDD = 3.8 to 13.2 V
SA @ GND, SB @ GND
Limits
C Suffix, 0 to 70_C
D Suffix, −40 to 85_C
Mina
Typb
Maxa
VINH
2
VINL
1
IINH
VIN = 2 V
1
IINL
VIN = 0 V
−1
VOUTH
IOUT = −500 mA
VDD = 10.8 V
VDD = 4.5 V
10.5
10.7
4.1
4.3
IOUT = −300 mA, VDD = 3.8 V
3.4
3.7
VOUTL
IOUT = 500 mA
VDD = 10.8 V
VDD = 4.5 V
0.2
0.3
0.2
0.4
IOUT = 300 mA, VDD = 3.8 V
0.1
0.4
IOLH
INA = INB w 2 V, VOUT = VDD = 13.2 V
−10
0
IOLL
VOUT = 0, VDD = 13.2 V
0
10
VCLH
VCLL
INA = INB w 2 V
IOUT = 100 mA
IOUT = −100 mA
VDD +0.7
−0.7
IN = 100 kHz, VDD = 5 V
IDD
INA = INB = 4.5 V, VDD = 5.5 V
2
300
TPLH
300
TPHL
VDD = 5 V
100
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Unit
V
mA
V
mA
V
mA
mA
nS
www.vishay.com
2
Document Number: 70007
S-40131—Rev. E, 16-Feb-04
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