SIE800DF-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SIE800DF-T1-GE3 Datasheet PDF : 10 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
25
VGS = 10 V thru 5 V
50
20
4V
40
15
30
10
20
5
10
3V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.014
2500
SiE800DF
Vishay Siliconix
TC = 125 °C
25 °C
- 55 °C
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.012
0.010
VGS = 4.5 V
2000
Ciss
1500
0.008
0.006
VGS = 10 V
0.004
0
10
20
30
40
50
60
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 18.5 A
8
VDS = 15 V
6
VDS = 24 V
4
2
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
1000
Coss
500
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 10.8 A
1.6
1.4
VGS = 10 V
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
www.vishay.com
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