SIE800DF データシートの表示（PDF） - Vishay Semiconductors
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SIE800DF Datasheet PDF : 10 Pages
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SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
0.020
TJ = 150 °C
10
0.016
0.012
ID = 10.8 A
TJ = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.0
0.008
TA = 125 °C
TA = 25 °C
0.004
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
2.6
40
ID = 250 µA
2.2
30
1.8
20
1.4
10
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
1
0.1
TA = 25 °C
Single Pulse
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
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