SIE800DF-T1-E3 データシートの表示（PDF） - Vishay Semiconductors
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SIE800DF-T1-E3 Datasheet PDF : 10 Pages
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SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
120
100
100
80
80
60
60
40
40
Package Limited
20
20
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
www.vishay.com
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