SII100N12 データシートの表示（PDF） - Sirectifier Electronics
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SII100N12 Datasheet PDF : 7 Pages
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SII100N12
NPT IGBT Modules
T yp. s witc hing time
I = f (IC) , inductive load , T j = 125°C
par.: VC E = 600 V , V G E = ± 15 V , R G = 6.8 Ω
10 3
T yp. s witc hing time
t = f (R G) , inductive load , Tj = 125°C
par.: VC E = 600 V , V G E = ± 15 V , IC = 100 A
10 4
t
ns
10 2
ns
tdoff
t
10 3
tdoff
tdon
tr
tdon
tf
tr
10 2
tf
10 1
0
50
100
150
A
250
IC
T yp. s witc hing los s es
E = f (IC) , inductive load , Tj = 125°C
par.: VC E = 600 V , V G E = ± 15 V , R G = 6.8 Ω
60
mWs
50
E
45
40
35
30
25
20
15
10
5
0
0
E on
E off
50
100
150
A
250
IC
10 1
0
10
20
30
40
Ω
60
RG
T yp. s witc hing los s es
E = f (R G ) , inductive load , T j = 125°C
par.: VC E = 600V , V G E = ± 15 V , IC = 100 A
40
E on
mWs
E
30
25
20
15
E off
10
5
0
0
10
20
30
40
Ω
60
RG
SirectifierR
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