SIM300D06AV3 データシートの表示（PDF） - SemiWell Semiconductor
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SIM300D06AV3 Datasheet PDF : 4 Pages
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Preliminary
SIM300D06AV3
“HALF-BRIDGE” IGBT MODULE
Feature
▪ Smart field stopper +Trench
design technology
▪ Low VCE (sat)
▪ Low Turn-off losses
▪ Short tail current for over 20KHz
Applications
▪ Motor controls
▪ VVVF inverters
▪ Inverter-type welding MC over 18KHZ
▪ SMPS, Electrolysis
▪ UPS/EPS, Robotics
VCES = 600V
Ic=300A
VCE(ON) typ. = 1.5V
@Ic=300A
Absolute Maximum Ratings @ Tj=25℃ (Per Leg)
Package : V3
Symbol
Parameter
VCES
Collector-to-Emitter Voltage
Condition
TC = 25℃
VGE
Gate emitter voltage
IC
Continuous Collector Current
TC = 80℃ (25℃)
ICP
Pulsed collector current
TC = 25℃
IF
Diode Continuous Forward Current
TC = 80℃ (25℃)
IFM
Diode Maximum Forward Current
TC = 25℃
tp
Short circuit test, VGE = 15V, VCC = 360V
TC = 150℃ (25℃)
Viso
Isolation Voltage test
AC @ 1 minute
Weight Weight of Module
Tj
Junction Temperature
Tstg
Storage Temperature
Md
Mounting torque with screw : M6
Ratings
600
± 20
300 (430)
600
300 (430)
600
6 (8)
2500
360
-40 ~ 150
-40 ~ 125
4.0
Unit
V
V
A
A
A
A
㎲
V
g
℃
℃
N.m
Static Characteristics @ Tj = 25℃ (unless otherwise specified)
Parameters
Min Typ Max Unit
Test conditions
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
VF
Forward voltage drop
RGINT Integrated gate resistor
1.50
1.95
5.8
6.5
IC = 300A, VGE = 15V
V
VCE = VGE, IC = 8㎃
ㅡ
ㅡ
5.0
㎃
VGE = 0V, VCE = 600V
ㅡ
ㅡ
400
㎁
VCE = 0V, VGE = 20V
1.6
1.9
V
IF = 300A
ㅡ
1
ㅡ
Ω
-1-
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