NE321000 データシートの表示（PDF） - NEC => Renesas Technology
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NE321000 Datasheet PDF : 12 Pages
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NE321000
RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
1
5
–
TYP.
2
10
–
MAX.
3
15
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut Off Voltage
Transconductance
Noise Figure
NF Associated Gain
Symbol
IGSO
IDSS
VGS(off)
gm
NF
Ga
Test Conditions
VGS = –3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, IDS = 100 µA
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 10 mA
f = 12 GHz
MIN.
TYP.
MAX.
Unit
–
0.5
10
µA
15
40
70
mA
–0.2
–0.7
–2.0
V
40
55
–
mS
–
0.35
0.45
dB
12.0
13.5
–
dB
Remark RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
2
Data Sheet P14270EJ2V0DS00
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