SM5073 データシートの表示（PDF） - Nippon Precision Circuits
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SM5073 Datasheet PDF : 14 Pages
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SM5073 series
SM5073C×S
VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Parameter
HIGH-level output voltage
LOW-level output voltage
Output leakage current
HIGH-level input voltage
LOW-level input voltage
Current consumption
INHN pull-up resistance
Built-in resistance
Built-in capacitance
Symbol
Conditions
Rating
Unit
Min
Typ
Max
VOH Q: Measurement circuit 1, IOH = 6mA
2.5
2.75
–
V
VOL Q: Measurement circuit 1, IOL = 6mA
–
0.2
0.4
V
IZ
Q: Measurement circuit 6,
INHN = LOW
VOH = VDD
VOL = VSS
–
–
10
µA
–
–
10
µA
VIH INHN
0.7VDD
–
–
V
VIL INHN
–
–
0.3VDD
V
SM5073C1S
–
Measurement circuit 2, load
IDD
circuit 1, INHN = open,
CL = 15pF,
SM5073C2S
SM5073C3S
–
–
f = 30MHz
SM5073C4S to 6S –
10
28
mA
9
27
mA
8.5
26.5
mA
8
26
mA
RUP Measurement circuit 3
Rf
Design value. A monitor pattern on a wafer is
RD
tested.
RB1 Measurement circuit 4
RB2
Design value. A monitor pattern on a wafer is
tested.
50
100
180
kΩ
150
300
540
kΩ
0.50
0.72
0.94
kΩ
100
200
360
kΩ
50
100
180
kΩ
CV
Design value. A monitor
VC = 0.3V
pattern on a wafer is tested. VC = 3.0V
CG
CD
Design value. A monitor pattern on a wafer is
tested.
CC
11.0
14.6
18.2
pF
2.3
4.0
5.7
pF
25.5
30
34.5
pF
25.5
30
34.5
pF
29.7
35
40.3
pF
SEIKO NPC CORPORATION —7
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