SMBJ3V3HE3/52 データシートの表示（PDF） - Vishay Semiconductors
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SMBJ3V3HE3/52 Datasheet PDF : 4 Pages
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SMBJ3V3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to lead (1)
RθJL
20
Typical thermal resistance, junction to ambient (2)
RθJA
100
Notes:
(1) Thermal resistance from junction to lead - mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to ambient - mounted on the recommended P.C.B. pad layout
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SMBJ3V3-E3/52
0.096
52
SMBJ3V3-E3/5B
0.096
5B
SMBJ3V3HE3/52 (1)
0.096
52
SMBJ3V3HE3/5B (1)
0.096
5B
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
10
tr = 10 µs
tr = 8 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
100
Peak Value
IPPM
decays to 50 % of IPPM
Half Value - IPP
1
IPPM
2
50
td = 1000 µs
td = 20 µs
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Figure 1. Pulse Waveform
0.1
0
25 50 75 100 125 150 175
TJ - Junction T emperature (°C)
Figure 3. Relative Variation of Leakage Current vs.
Junction Temperature
10
10
8
1
0.1
0.01
0.1
1
10
td - Pulse Width (ms)
Figure 2. Peak Pulse Power Rating Curve
6
10/1000 µs
8/20 µs
4
0.1
1
10
100
1000
IPP (A)
Figure 4. Clamping Voltage vs. Peak Pulse Current
(TJ initial = 25 °C)
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 88940
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 22-Oct-08
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