Q68000-A6482 データシートの表示（PDF） - Siemens AG

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Q68000-A6482

NPN Silicon Transistors for High Voltages

Siemens AG 

NPN Silicon Transistors for High Voltages

q High breakdown voltage

q Low collector-emitter saturation voltage

q Complementary types: SMBTA 92, SMBTA 93 (PNP)

SMBTA 42

SMBTA 43

Type

SMBTA 42

SMBTA 43

Marking

s1D

s1E

Ordering Code

(tape and reel)

Q68000-A6478

Q68000-A6482

Pin Configuration

1

2

3

B

E

C

Package1)

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation, TS = 74 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient2)

Junction - soldering point

Symbol

Values

SMBTA 42 SMBTA 43

VCE0

300

200

VCB0

300

200

VEB0

6

IC

500

IB

100

Ptot

360

Tj

150

Tstg

– 65 … + 150

Unit

V

mA

mW

˚C

Rth JA

Rth JS

≤ 280

K/W

≤ 210

1) For detailed information see chapter Package Outlines.

2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

1

5.91

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