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SST58LD016-70-C-P1H データシートの表示(PDF) - Silicon Storage Technology

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SST58LD016-70-C-P1H
SST
Silicon Storage Technology SST
SST58LD016-70-C-P1H Datasheet PDF : 40 Pages
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ATA-Disk Chip
SST58SD008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192
SST58LD008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192
Data Sheet
2.3 Electrical Specification
The following tables define all D.C. Characteristics for the SST ATA-Disk Chip product family.
2.3.1 Absolute Maximum Conditions
Unless otherwise stated, conditions are for Commercial Temperature:
Non-operating (storage) temperature range: -50°C to +100°C
VDD = 4.5-5.5V
VDD = 3.135-3.465V
Ta = 0°C to +70°C
ABSOLUTE MAXIMUM CONDITIONS
Parameter
Input Power
Voltage on any pin except VDD with respect to GND
Symbol
VDD
V
Conditions
-0.3V min. to 6.5V max.
-0.5V min. to VDD + 0.5V max.
INPUT POWER
Voltage
3.135-3.465V
4.5-5.5V
Maximum Average RMS
Active Current
75 mA
100 mA
Maximum Average RMS
Sleep Current
200 µA
300 µA
Measurement Method
3.3V at 25°C1
5.0V at 25°C1
1. Current measurement is accomplished by connecting an amp meter (set to the 2 amp scale range) in series with the VDD supply to
the ADC. Current measurements are to be taken while looping on a data transfer command with a sector count of 128.
Current consumption values for both Read and Write commands are not to exceed the Maximum Average RMS Current specified in
this table.
ADC products shall operate correctly in both voltage ranges as shown in the tables above. To comply with this
specification, current requirements must not exceed the maximum limit.
2.3.2 Input Leakage Current
In the table below, x refers to the characteristics described in section 2.3.2. For example, I1U indicates a pull up
resistor with a type 1 input characteristic.
Type
IxZ
IxU
IxD
Parameter
Input Leakage Current
Pull Up Resistor
Pull Down Resistor
Symbol
IL
RPU1
RPD1
Conditions
VIH = VDD / VIL = Gnd
VDD = 5.0V
VDD = 5.0V
Min
Typ Max
Units
-1
1
µA
50k
500k
Ohm
50k
500k
Ohm
©2001 Silicon Storage Technology, Inc.
10
S71167-05-000 9/01 391

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