SPB80N04S2-H4 データシートの表示（PDF） - Infineon Technologies
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SPB80N04S2-H4 Datasheet PDF : 8 Pages
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
Product Summary
VDS
40 V
RDS(on)
4 mΩ
ID
80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N04S2-H4
SPB80N04S2-H4
SPI80N04S2-H4
Package
Ordering Code
P- TO220 -3-1 Q67060-S6014
P- TO263 -3-2 Q67060-S6013
P- TO262 -3-1 Q67060-S6014
Marking
2N04H4
2N04H4
2N04H4
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
660
25
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-08
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