SPB80N04S2-H4 データシートの表示（PDF） - Infineon Technologies

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SPB80N04S2-H4

OptiMOS® Power-Transistor

Infineon Technologies 

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

SPI80N04S2-H4

SPP80N04S2-H4,SPB80N04S2-H4

Symbol

Values

Unit

min. typ. max.

RthJC

RthJA

RthJA

- 0.35 0.5 K/W

-

-

62

-

-

62

-

-

40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = VDS

ID=250µA

Zero gate voltage drain current

VDS=40V, VGS=0V, Tj=25°C

VDS=40V, VGS=0V, Tj=125°C2)

V(BR)DSS 40

-

-V

VGS(th)

2.1

3

4

IDSS

µA

- 0.01 1

-

1 100

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=10V, ID=80A

IGSS

-

1 100 nA

RDS(on)

-

3.4

4 mΩ

1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 200A at 25°C, for detailed

information see app.-note ANPS071E available at www.infineon.com/optimos

2Defined by design. Not subject to production test.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2003-05-08

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