SPB80N04S2-H4 データシートの表示（PDF） - Infineon Technologies
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SPB80N04S2-H4 Datasheet PDF : 8 Pages
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5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N04S2-H4
Ptot = 300W
A
hgf
160
140
120
100
80
VGS [V]
ea
4.0
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
d
h
10.0
60
40
c
20
b
0
a
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
13 SPP80N04S2-H4
Ω
d
e
11
10
9
8
7
6
5
f
4
g
h
3
2
VGS [V] =
1
de f
5.5 6.0 6.5
0
0 20 40
gh
7.0 10.0
60 80
100 120 140
A 180
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
140
S
120
100
100
80
80
60
60
40
40
20
20
0
0
1
2
3
4
V
6
VGS
Page 5
0
0 20 40 60 80 100 120 A 160
ID
2003-05-08
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