SPB80N04S2-H4 データシートの表示（PDF） - Infineon Technologies

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SPB80N04S2-H4

OptiMOS® Power-Transistor

Infineon Technologies 

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 80 A, VGS = 10 V

SPP80N04S2-H4

12

Ω

10

9

8

7

6

5

4

3

2

1

0

-60 -20

98%

typ

20 60 100 140 °C 200

Tj

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

10 5

pF

SPI80N04S2-H4

SPP80N04S2-H4,SPB80N04S2-H4

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

3.5

V

1.25 mA

250 µA

2.5

2

1.5

1

0.5

0

-60 -20

20

60 100 °C 180

Tj

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

10 3 SPP80N04S2-H4

A

10 4

Ciss

Coss

10 2

10 3

Crss

10 2

0

5

10

15

20

V

30

VDS

10 1

10 0

0

Tj = 25 °C typ

Tj = 175 °C typ

Tj = 25 °C (98%)

Tj = 175 °C (98%)

0.4 0.8 1.2 1.6 2 2.4 V 3

VSD

Page 6

2003-05-08

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