SPB80N04S2-H4 データシートの表示（PDF） - Infineon Technologies
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SPB80N04S2-H4 Datasheet PDF : 8 Pages
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SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω
700
mJ
600
550
500
450
400
350
300
250
200
150
100
50
0
25 45 65 85 105 125 145 °C 185
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
SPP80N04S2-H4
48
V
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 80 A pulsed
SPP80N04S2-H4
16
V
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 20 40 60 80 100 120 140 nC 170
QGate
46
45
44
43
42
41
40
39
38
37
36
-60 -20 20 60 100 140 °C 200
Tj
Page 7
2003-05-08
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