Drain-source on-resistance
RDS(on) = f (Tj)
parameter : ID = 28 , VGS = 4.5 V
SPD28N03L
0.070
Ω
0.060
0.055
0.050
0.045
0.040
0.035
98%
0.030
typ
0.025
0.020
0.015
0.010
0.005
0.000-60 -20
20
60 100 140 °C 200
Tj
Typ. capacitances
C = f (VDS)
parameter: VGS = 0 V, f = 1 MHz
10 4
SPD28N03L
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS, ID = 50 µA
3.0
V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
max
0.8
0.6
typ
0.4
0.2
min
0.0
-60 -20
20
60 100 140 °C 200
Tj
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 SPD28N03L
A
pF
10 2
10 3
Ciss
Coss
Crss
10 2
0 4 8 12 16 20 24 28 V 36
VDS
Semiconductor Group
7
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD