SPU04N60S5 データシートの表示（PDF） - Infineon Technologies

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SPU04N60S5

Cool MOS™ Power Transistor

Infineon Technologies 

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

SPU04N60S5

SPD04N60S5

VDS

RDS(on)

ID

PG-TO252

600 V

0.95 Ω

4.5 A

PG-TO251

2

3

1

3

2

1

Type

SPU04N60S5

SPD04N60S5

Package

PG-TO251

PG-TO252

Ordering Code

Q67040-S4228

Q67040-S4202

Marking

04N60S5

04N60S5

Maximum Ratings

Parameter

Symbol

Continuous drain current

ID

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

ID puls

Avalanche energy, single pulse

EAS

ID = 3.4 A, VDD = 50 V

Avalanche energy, repetitive tAR limited by Tjmax1) EAR

ID = 4.5 A, VDD = 50 V

Avalanche current, repetitive tAR limited by Tjmax IAR

Gate source voltage

VGS

Gate source voltage AC (f >1Hz)

VGS

Power dissipation, TC = 25°C

Ptot

Operating and storage temperature

Tj , Tstg

Value

4.5

2.8

9

130

0.4

4.5

±20

±30

50

-55... +150

Unit

A

mJ

A

V

W

°C

Rev. 2.5

Page 1

2008-04-08

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