SPU04N60S5 データシートの表示（PDF） - Infineon Technologies

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SPU04N60S5

Cool MOS™ Power Transistor

Infineon Technologies 

SPU04N60S5

SPD04N60S5

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 4.5 A, Tj = 125 °C

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

Soldering temperature, *)

1.6 mm (0.063 in.) from case for 10s

Symbol

dv/dt

Value

20

Unit

V/ns

Symbol

RthJC

RthJA

RthJA

Tsold

Values

Unit

min. typ. max.

-

-

2.5 K/W

-

-

62

-

-

62

-

35

-

-

- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600

-

Drain-Source avalanche

V(BR)DS VGS=0V, ID=4.5A

-

700

breakdown voltage

-V

-

Gate threshold voltage

VGS(th) ID=200µΑ, VGS=VDS 3.5

4.5

5.5

Zero gate voltage drain current IDSS

VDS=600V, VGS=0V,

µA

Tj=25°C,

-

0.5

1

Tj=150°C

-

-

50

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

- 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=2.8A,

Ω

Tj=25°C

- 0.85 0.95

Tj=150°C

-

2.3

-

Gate input resistance

RG

f=1MHz, open Drain

-

20

-

*) TO252: reflow soldering, MSL3; TO251: wavesoldering

Rev. 2.5

Page 2

2008-04-08

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